[6287pcs Stock]
- Bilang ng Bahagi:
- HN2C01FE-GR(T5L,F)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS 2NPN 50V 0.15A ES6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Mga Transistor - Bipolar (BJT) - RF, Transistor - Espesyal na Pakay, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Rectifiers - Single, Transistor - IGBTs - Mga Module and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage HN2C01FE-GR(T5L,F) electronic components. HN2C01FE-GR(T5L,F) can be shipped within 24 hours after order. If you have any demands for HN2C01FE-GR(T5L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN2C01FE-GR(T5L,F) Mga katangian ng produkto
Bilang ng Bahagi :
HN2C01FE-GR(T5L,F)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS 2NPN 50V 0.15A ES6
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng Transistor :
2 NPN (Dual)
Kasalukuyang - Kolektor (Ic) (Max) :
150mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA, 6V
Kapangyarihan - Max :
100mW
Dalas - Paglilipat :
60MHz
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-563, SOT-666
Package ng Tagabigay ng Device :
ES6
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