Vishay Semiconductor Diodes Division - EGL34FHE3_A/H

KEY Part #: K6457963

EGL34FHE3_A/H Pagpepresyo (USD) [782736pcs Stock]

  • 1 pcs$0.04725

Bilang ng Bahagi:
EGL34FHE3_A/H
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 300V 500MA DO213. Rectifiers 0.5A,300V,50NS AEC-Q101 Qualified
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Single, Mga Transistor - JFET, Thyristors - Mga TRIAC, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Arrays and Mga module ng Power driver ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division EGL34FHE3_A/H electronic components. EGL34FHE3_A/H can be shipped within 24 hours after order. If you have any demands for EGL34FHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGL34FHE3_A/H Mga katangian ng produkto

Bilang ng Bahagi : EGL34FHE3_A/H
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 300V 500MA DO213
Serye : Automotive, AEC-Q101, Superectifier®
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 300V
Kasalukuyang - Average na Rectified (Io) : 500mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.35V @ 500mA
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 300V
Capacitance @ Vr, F : 7pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-213AA (Glass)
Package ng Tagabigay ng Device : DO-213AA (GL34)
Operating temperatura - Junction : -65°C ~ 175°C

Maaari ka ring Makisalamuha sa
  • RGL34B-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM

  • RGL34D-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 500MA DO213. Diodes - General Purpose, Power, Switching 200 Volt 0.5A 150ns 10 Amp IFSM

  • RGL34B-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM

  • RGL34J-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 500MA DO213. Diodes - General Purpose, Power, Switching 600 Volt 0.5A 250ns 10 Amp IFSM

  • BYM07-200-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 500MA DO213. Rectifiers 0.5 Amp 200 Volt

  • BYM07-100-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Rectifiers 0.5 Amp 100 Volt