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  5. 1N5809US

Microsemi Corporation - 1N5809US

KEY Part #: K6426619

1N5809US Pagpepresyo (USD) [8275pcs Stock]

  • 1 pcs$4.97550
  • 10 pcs$4.47707
  • 25 pcs$4.07894
  • 100 pcs$3.68108
  • 250 pcs$3.38260
  • 500 pcs$3.08413
Bilang ng Bahagi:
1N5809US
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 100V 3A B-MELF. Rectifiers Rectifier
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Diode - Rectifiers - Single, Transistor - Espesyal na Pakay, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased and Diode - Rectifiers - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation 1N5809US electronic components. 1N5809US can be shipped within 24 hours after order. If you have any demands for 1N5809US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5809US Mga katangian ng produkto

Bilang ng Bahagi : 1N5809US
Tagagawa : Microsemi Corporation
Paglalarawan : DIODE GEN PURP 100V 3A B-MELF
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 100V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 875mV @ 4A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 60pF @ 10V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SQ-MELF, B
Package ng Tagabigay ng Device : B, SQ-MELF
Operating temperatura - Junction : -65°C ~ 175°C

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