HGTD7N60C3S9A Pagpepresyo (USD) [102687pcs Stock]
- 1 pcs$0.38078
- 2,500 pcs$0.34557
- Bilang ng Bahagi:
- HGTD7N60C3S9A
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- IGBT 600V 14A 60W TO252AA.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Single, Diode - Zener - Single, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor HGTD7N60C3S9A electronic components. HGTD7N60C3S9A can be shipped within 24 hours after order. If you have any demands for HGTD7N60C3S9A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTD7N60C3S9A Mga katangian ng produkto
Bilang ng Bahagi :
HGTD7N60C3S9A
Tagagawa :
ON Semiconductor
Paglalarawan :
IGBT 600V 14A 60W TO252AA
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng IGBT :
-
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
600V
Kasalukuyang - Kolektor (Ic) (Max) :
14A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
56A
Vce (on) (Max) @ Vge, Ic :
2V @ 15V, 7A
Kapangyarihan - Max :
60W
Paglipat ng Enerhiya :
165µJ (on), 600µJ (off)
Uri ng input :
Standard
Gate Charge :
23nC
Td (on / off) @ 25 ° C :
-
Kondisyon ng Pagsubok :
-
Reverse Recovery Time (trr) :
-
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
Package ng Tagabigay ng Device :
TO-252AA
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