Infineon Technologies - FF50R12RT4HOSA1

KEY Part #: K6532659

FF50R12RT4HOSA1 Pagpepresyo (USD) [1939pcs Stock]

  • 1 pcs$22.33106

Bilang ng Bahagi:
FF50R12RT4HOSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
IGBT MODULE 1200V 50A.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Arrays, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Transistor - IGBTs - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies FF50R12RT4HOSA1 electronic components. FF50R12RT4HOSA1 can be shipped within 24 hours after order. If you have any demands for FF50R12RT4HOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FF50R12RT4HOSA1 Mga katangian ng produkto

Bilang ng Bahagi : FF50R12RT4HOSA1
Tagagawa : Infineon Technologies
Paglalarawan : IGBT MODULE 1200V 50A
Serye : -
Katayuan ng Bahagi : Active
Uri ng IGBT : Trench Field Stop
Pag-configure : Half Bridge
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 1200V
Kasalukuyang - Kolektor (Ic) (Max) : 50A
Kapangyarihan - Max : 285W
Vce (on) (Max) @ Vge, Ic : 2.15V @ 15V, 50A
Kasalukuyang - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 2.8nF @ 25V
Input : Standard
NTC Thermistor : No
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : Module
Package ng Tagabigay ng Device : Module

Maaari ka ring Makisalamuha sa
  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • CPV362M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 31 IMS-2.

  • CPV362M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 3.9A IMS-2.

  • CPV363M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6.8A IMS-2.

  • A2C25S12M3-F

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.