DMN3009SFGQ-7 Pagpepresyo (USD) [191069pcs Stock]
- 1 pcs$0.19358
- Bilang ng Bahagi:
- DMN3009SFGQ-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 30VPOWERDI3333-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Thyristors - SCR - Mga Module, Transistors - IGBTs - Single, Mga Transistor - Bipolar (BJT) - RF, Mga module ng Power driver and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN3009SFGQ-7 electronic components. DMN3009SFGQ-7 can be shipped within 24 hours after order. If you have any demands for DMN3009SFGQ-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3009SFGQ-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMN3009SFGQ-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 30VPOWERDI3333-8
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
16A (Ta), 45A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2nF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
900mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PowerDI3333-8
Pakete / Kaso :
8-PowerVDFN
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