Vishay Semiconductor Diodes Division - 1N5230B-TAP

KEY Part #: K6516931

1N5230B-TAP Pagpepresyo (USD) [3081431pcs Stock]

  • 1 pcs$0.01200
  • 30,000 pcs$0.01076

Bilang ng Bahagi:
1N5230B-TAP
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE ZENER 4.7V 500MW DO35. Zener Diodes 4.7 Volt 0.5W 5%
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga TRIAC, Transistor - Mga FET, MOSFET - Single, Diode - Zener - Single, Mga Transistor - FET, MOSFET - RF, Thyristors - DIACs, SIDACs, Diode - Rectifiers - Single and Transistors - IGBTs - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division 1N5230B-TAP electronic components. 1N5230B-TAP can be shipped within 24 hours after order. If you have any demands for 1N5230B-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5230B-TAP Mga katangian ng produkto

Bilang ng Bahagi : 1N5230B-TAP
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE ZENER 4.7V 500MW DO35
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Boltahe - Zener (Nom) (Vz) : 4.7V
Toleransa : ±5%
Kapangyarihan - Max : 500mW
Impedance (Max) (Zzt) : 19 Ohms
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 2V
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.1V @ 200mA
Temperatura ng pagpapatakbo : 175°C
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-204AH, DO-35, Axial
Package ng Tagabigay ng Device : DO-35

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