Vishay Semiconductor Diodes Division - BAW27-TAP

KEY Part #: K6455271

BAW27-TAP Pagpepresyo (USD) [3340050pcs Stock]

  • 1 pcs$0.01107
  • 50,000 pcs$0.00930

Bilang ng Bahagi:
BAW27-TAP
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 60V 600MA DO35. Diodes - General Purpose, Power, Switching 75 Volt 200mA 4.0 Amp IFSM
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Mga Transistor - JFET, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Arrays, Diode - Rectifiers - Arrays, Transistor - Mga FET, MOSFET - Single and Transistor - Mga FET, MOSFET - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division BAW27-TAP electronic components. BAW27-TAP can be shipped within 24 hours after order. If you have any demands for BAW27-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAW27-TAP Mga katangian ng produkto

Bilang ng Bahagi : BAW27-TAP
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 60V 600MA DO35
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 60V
Kasalukuyang - Average na Rectified (Io) : 600mA (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.25V @ 400mA
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 6ns
Kasalukuyang - Reverse Leakage @ Vr : 100nA @ 60V
Capacitance @ Vr, F : 4pF @ 0V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-204AH, DO-35, Axial
Package ng Tagabigay ng Device : DO-35
Operating temperatura - Junction : 175°C (Max)

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