Taiwan Semiconductor Corporation - TSM080N03EPQ56 RLG

KEY Part #: K6403327

TSM080N03EPQ56 RLG Pagpepresyo (USD) [457451pcs Stock]

1 pcs$0.08086

Bilang ng Bahagi:: TSM080N03EPQ56 RLG

Tagagawa:: Taiwan Semiconductor Corporation

Detalyadong Paglalarawan:: MOSFET N-CH 30V 55A 8PDFN.

Manufacturer's standard lead time:: Sa stock

Buhay sa istante:: Isang taon

Chip Mula:: Hong Kong

RoHS:

Paraan ng Pagbayad:

Paraan ng pagpapadala:

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Kumpetensyang Pakinabang:: We specialize in Taiwan Semiconductor Corporation TSM080N03EPQ56 RLG electronic components. TSM080N03EPQ56 RLG can be shipped within 24 hours after order. If you have any demands for TSM080N03EPQ56 RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

TSM080N03EPQ56 RLG Mga katangian ng produkto

Bilang ng Bahagi : TSM080N03EPQ56 RLG

Tagagawa : Taiwan Semiconductor Corporation

Paglalarawan : MOSFET N-CH 30V 55A 8PDFN

Serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 55A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 8 mOhm @ 16A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 4.5V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 750pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 54W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 8-PDFN (5x6)

Pakete / Kaso : 8-PowerTDFN

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