HN2D01JE(TE85L,F) Pagpepresyo (USD) [1060332pcs Stock]
- 1 pcs$0.03488
- Bilang ng Bahagi:
- HN2D01JE(TE85L,F)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- DIODE ARRAY GP 80V 100MA ESV. Diodes - General Purpose, Power, Switching Switching Diode 2 Circuit 0.1A 80V
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Diode - Mga Rectifier ng Bridge, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Rectifiers - Single, Thyristors - Mga TRIAC and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage HN2D01JE(TE85L,F) electronic components. HN2D01JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN2D01JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN2D01JE(TE85L,F) Mga katangian ng produkto
Bilang ng Bahagi :
HN2D01JE(TE85L,F)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
DIODE ARRAY GP 80V 100MA ESV
Serye :
-
Katayuan ng Bahagi :
Active
Pag-configure ng Diode :
2 Independent
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
80V
Kasalukuyang - Average Rectified (Io) (bawat Diode) :
100mA
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.2V @ 100mA
Bilis :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
1.6ns
Kasalukuyang - Reverse Leakage @ Vr :
500nA @ 80V
Operating temperatura - Junction :
150°C (Max)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-553
Package ng Tagabigay ng Device :
ESV
Pinakabagong Balita
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UMN1NTR
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DIODE ARRAY GP 80V 25MA UMD5. Diodes - General Purpose, Power, Switching SWITCH 80V 25MA
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