Microsemi Corporation - JANTX1N6312US

KEY Part #: K6479710

JANTX1N6312US Pagpepresyo (USD) [279pcs Stock]

  • 1 pcs$158.60680
  • 10 pcs$150.94992
  • 50 pcs$145.48072
  • 100 pcs$142.19920
  • 250 pcs$140.01152
  • 500 pcs$136.73000
  • 1,000 pcs$131.26080

Bilang ng Bahagi:
JANTX1N6312US
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
DIODE ZENER 3.3V 500MW B-SQ MELF. Zener Diodes Zener Diodes
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Espesyal na Pakay, Transistor - IGBTs - Mga Module, Transistor - IGBTs - Arrays, Diode - Zener - Arrays, Diode - Rectifiers - Single, Diode - RF and Diode - Rectifiers - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation JANTX1N6312US electronic components. JANTX1N6312US can be shipped within 24 hours after order. If you have any demands for JANTX1N6312US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTX1N6312US Mga katangian ng produkto

Bilang ng Bahagi : JANTX1N6312US
Tagagawa : Microsemi Corporation
Paglalarawan : DIODE ZENER 3.3V 500MW B-SQ MELF
Serye : Military, MIL-PRF-19500/533
Katayuan ng Bahagi : Active
Boltahe - Zener (Nom) (Vz) : 3.3V
Toleransa : ±5%
Kapangyarihan - Max : 500mW
Impedance (Max) (Zzt) : 27 Ohms
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 1V
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.4V @ 1A
Temperatura ng pagpapatakbo : -65°C ~ 175°C
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SQ-MELF, B
Package ng Tagabigay ng Device : B, SQ-MELF

Maaari ka ring Makisalamuha sa
  • BAW156E6327HTSA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • MMBD1705A

    ON Semiconductor

    DIODE ARRAY GP 30V 50MA SOT23-3.

  • SMBD7000E6327HTSA1

    Infineon Technologies

    DIODE ARRAY GP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A

  • 1SS181,LF

    Toshiba Semiconductor and Storage

    DIODE ARRAY GP 80V 100MA SC59. Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR

  • BAV170E6433HTMA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode Array

  • BAV70E6433HTMA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode 200mA