IRFB23N20DPBF Pagpepresyo (USD) [44532pcs Stock]
- 1 pcs$0.84038
- 10 pcs$0.76011
- 100 pcs$0.61093
- 500 pcs$0.47518
- 1,000 pcs$0.39372
- Bilang ng Bahagi:
- IRFB23N20DPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 24A TO-220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Single, Diode - Rectifiers - Arrays, Transistor - IGBTs - Arrays, Mga Transistor - JFET, Diode - Rectifiers - Single, Mga module ng Power driver and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFB23N20DPBF electronic components. IRFB23N20DPBF can be shipped within 24 hours after order. If you have any demands for IRFB23N20DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB23N20DPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFB23N20DPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 200V 24A TO-220AB
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
24A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1960pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
3.8W (Ta), 170W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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