DD800S33K2CNOSA1 Pagpepresyo (USD) [68pcs Stock]
- 1 pcs$520.79847
- Bilang ng Bahagi:
- DD800S33K2CNOSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- IGBT MODULE VCES 1700V 800A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Thyristors - Mga SCR, Transistors - IGBTs - Single, Thyristors - SCR - Mga Module, Mga Transistor - FET, MOSFET - RF, Transistor - Programmable Unijunction, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies DD800S33K2CNOSA1 electronic components. DD800S33K2CNOSA1 can be shipped within 24 hours after order. If you have any demands for DD800S33K2CNOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DD800S33K2CNOSA1 Mga katangian ng produkto
Bilang ng Bahagi :
DD800S33K2CNOSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
IGBT MODULE VCES 1700V 800A
Serye :
-
Katayuan ng Bahagi :
Active
Pag-configure ng Diode :
2 Independent
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
3300V
Kasalukuyang - Average Rectified (Io) (bawat Diode) :
-
Boltahe - Ipasa (Vf) (Max) @ Kung :
3.5V @ 800A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
1100A @ 1800V
Operating temperatura - Junction :
-40°C ~ 125°C
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
Module
Package ng Tagabigay ng Device :
A-IHV130-3
Pinakabagong Balita
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