STO33N60M6 Pagpepresyo (USD) [37953pcs Stock]
- 1 pcs$1.03020
- Bilang ng Bahagi:
- STO33N60M6
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- N-CHANNEL 600 V 105 MOHM TYP..
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Single, Diode - Mga Rectifier ng Bridge, Mga Transistor - JFET, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays, Mga module ng Power driver and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STO33N60M6 electronic components. STO33N60M6 can be shipped within 24 hours after order. If you have any demands for STO33N60M6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STO33N60M6 Mga katangian ng produkto
Bilang ng Bahagi :
STO33N60M6
Tagagawa :
STMicroelectronics
Paglalarawan :
N-CHANNEL 600 V 105 MOHM TYP.
Serye :
MDmesh™ M6
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
25A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
125 mOhm @ 12.5A, 10V
Vgs (th) (Max) @ Id :
4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
33.4nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1515pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
230W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TOLL (HV)
Pakete / Kaso :
8-PowerSFN
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