TSM130NB06LCR RLG Pagpepresyo (USD) [267739pcs Stock]
- 1 pcs$0.13815
- Bilang ng Bahagi:
- TSM130NB06LCR RLG
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- MOSFET SINGLE N-CHANNEL TRENCH.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - IGBTs - Arrays, Diode - Mga Rectifier ng Bridge, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Arrays and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation TSM130NB06LCR RLG electronic components. TSM130NB06LCR RLG can be shipped within 24 hours after order. If you have any demands for TSM130NB06LCR RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM130NB06LCR RLG Mga katangian ng produkto
Bilang ng Bahagi :
TSM130NB06LCR RLG
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
MOSFET SINGLE N-CHANNEL TRENCH
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Ta), 51A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
13 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2175pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
3.1W (Ta), 83W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-PDFN (5x6)
Pakete / Kaso :
8-PowerTDFN
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