Bilang ng Bahagi :
SCT3022KLGC11
Tagagawa :
Rohm Semiconductor
Paglalarawan :
SCT3022KL IS AN SIC SILICON CAR
Katayuan ng Bahagi :
Active
Teknolohiya :
SiCFET (Silicon Carbide)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
95A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
28.6 mOhm @ 36A, 18V
Vgs (th) (Max) @ Id :
5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs :
178nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2879pF @ 800V
Power Dissipation (Max) :
427W
Temperatura ng pagpapatakbo :
175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247N