Infineon Technologies - BSM150GB120DN2HOSA1

KEY Part #: K6534310

BSM150GB120DN2HOSA1 Pagpepresyo (USD) [589pcs Stock]

  • 1 pcs$78.76742

Bilang ng Bahagi:
BSM150GB120DN2HOSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
IGBT 2 MED POWER 62MM-1.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Arrays, Transistor - IGBTs - Mga Module, Transistor - Espesyal na Pakay and Diode - Mga Rectifier ng Bridge ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies BSM150GB120DN2HOSA1 electronic components. BSM150GB120DN2HOSA1 can be shipped within 24 hours after order. If you have any demands for BSM150GB120DN2HOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSM150GB120DN2HOSA1 Mga katangian ng produkto

Bilang ng Bahagi : BSM150GB120DN2HOSA1
Tagagawa : Infineon Technologies
Paglalarawan : IGBT 2 MED POWER 62MM-1
Serye : -
Katayuan ng Bahagi : Not For New Designs
Uri ng IGBT : -
Pag-configure : Half Bridge
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 1200V
Kasalukuyang - Kolektor (Ic) (Max) : 210A
Kapangyarihan - Max : 1250W
Vce (on) (Max) @ Vge, Ic : 3V @ 15V, 150A
Kasalukuyang - Collector Cutoff (Max) : 2.8mA
Input Capacitance (Cies) @ Vce : 11nF @ 25V
Input : Standard
NTC Thermistor : No
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : Module
Package ng Tagabigay ng Device : Module

Maaari ka ring Makisalamuha sa
  • GA400TD25S

    Vishay Semiconductor Diodes Division

    IGBT FAST 250V 400A INT-A-PAK.

  • CPV364M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 15A IMS-2.

  • CPV363M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 9A IMS-2.

  • GA200SA60U

    Vishay Semiconductor Diodes Division

    IGBT UFAST 600V 100A SOT227.

  • GA200SA60S

    Vishay Semiconductor Diodes Division

    IGBT STD 600V 100A SOT227.

  • STGE50NB60HD

    STMicroelectronics

    IGBT N-CHAN 600V 50A ISOTOP.