MT3S111P(TE12L,F) Pagpepresyo (USD) [244499pcs Stock]
- 1 pcs$0.15128
- Bilang ng Bahagi:
- MT3S111P(TE12L,F)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- RF TRANS NPN 6V 8GHZ PW-MINI.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - Programmable Unijunction, Thyristors - DIACs, SIDACs, Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Arrays, Diode - Zener - Arrays and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage MT3S111P(TE12L,F) electronic components. MT3S111P(TE12L,F) can be shipped within 24 hours after order. If you have any demands for MT3S111P(TE12L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MT3S111P(TE12L,F) Mga katangian ng produkto
Bilang ng Bahagi :
MT3S111P(TE12L,F)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
RF TRANS NPN 6V 8GHZ PW-MINI
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
NPN
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
6V
Dalas - Paglilipat :
8GHz
Ingay ng Larawan (dB Typ @ f) :
1.25dB @ 1GHz
Makakuha :
10.5dB
Kapangyarihan - Max :
1W
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA, 5V
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-243AA
Package ng Tagabigay ng Device :
PW-MINI
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