[12758pcs Stock]
- Bilang ng Bahagi:
- IRF830L
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 500V 4.5A TO-262.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Diode - Mga Rectifier ng Bridge, Mga module ng Power driver, Mga Transistor - JFET, Transistor - Espesyal na Pakay, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Arrays and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix IRF830L electronic components. IRF830L can be shipped within 24 hours after order. If you have any demands for IRF830L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF830L Mga katangian ng produkto
Bilang ng Bahagi :
IRF830L
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 500V 4.5A TO-262
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
500V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.5A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
610pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
3.1W (Ta), 74W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I2PAK
Pakete / Kaso :
TO-262-3 Long Leads, I²Pak, TO-262AA
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