Vishay Semiconductor Diodes Division - BYD33JGPHE3/54

KEY Part #: K6437860

BYD33JGPHE3/54 Pagpepresyo (USD) [827184pcs Stock]

  • 1 pcs$0.04472
  • 11,000 pcs$0.04052

Bilang ng Bahagi:
BYD33JGPHE3/54
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 1A DO204AL.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Transistor - Mga FET, MOSFET - Arrays, Transistor - Programmable Unijunction, Thyristors - SCR - Mga Module, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga SCR, Thyristors - DIACs, SIDACs and Diode - Rectifiers - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division BYD33JGPHE3/54 electronic components. BYD33JGPHE3/54 can be shipped within 24 hours after order. If you have any demands for BYD33JGPHE3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYD33JGPHE3/54 Mga katangian ng produkto

Bilang ng Bahagi : BYD33JGPHE3/54
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 600V 1A DO204AL
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.3V @ 1A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 250ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 15pF @ 4V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-204AL, DO-41, Axial
Package ng Tagabigay ng Device : DO-204AL (DO-41)
Operating temperatura - Junction : -65°C ~ 175°C

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