Infineon Technologies - IPB120P04P4L03ATMA1

KEY Part #: K6417496

IPB120P04P4L03ATMA1 Pagpepresyo (USD) [74051pcs Stock]

  • 1 pcs$0.52803
  • 1,000 pcs$0.48448

Bilang ng Bahagi:
IPB120P04P4L03ATMA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET P-CH 40V 120A TO263-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
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Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPB120P04P4L03ATMA1 electronic components. IPB120P04P4L03ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB120P04P4L03ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB120P04P4L03ATMA1 Mga katangian ng produkto

Bilang ng Bahagi : IPB120P04P4L03ATMA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET P-CH 40V 120A TO263-3
Serye : OptiMOS™
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 340µA
Gate Charge (Qg) (Max) @ Vgs : 234nC @ 10V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 15000pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 136W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : D²PAK (TO-263AB)
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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