Vishay Semiconductor Diodes Division - UG8FTHE3/45

KEY Part #: K6445597

UG8FTHE3/45 Pagpepresyo (USD) [2053pcs Stock]

  • 1,000 pcs$0.24916

Bilang ng Bahagi:
UG8FTHE3/45
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 300V 8A TO220AC.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Mga FET, MOSFET - Arrays, Diode - Rectifiers - Single, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - RF and Mga Transistor - FET, MOSFET - RF ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division UG8FTHE3/45 electronic components. UG8FTHE3/45 can be shipped within 24 hours after order. If you have any demands for UG8FTHE3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UG8FTHE3/45 Mga katangian ng produkto

Bilang ng Bahagi : UG8FTHE3/45
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 300V 8A TO220AC
Serye : -
Katayuan ng Bahagi : Obsolete
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 300V
Kasalukuyang - Average na Rectified (Io) : 8A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.25V @ 8A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 300V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Through Hole
Pakete / Kaso : TO-220-2
Package ng Tagabigay ng Device : TO-220AC
Operating temperatura - Junction : -40°C ~ 150°C

Maaari ka ring Makisalamuha sa
  • BAT54WH6327XTSA1

    Infineon Technologies

    DIODE SCHOTTKY 30V 200MA SOT323.

  • IDB23E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 41A TO263-3.

  • IDB12E120ATMA1

    Infineon Technologies

    DIODE GEN PURP 1.2KV 28A TO263-3.

  • IDB45E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 71A TO263-3.

  • IDB15E60

    Infineon Technologies

    DIODE GEN PURP 600V 29.2A TO263. Diodes - General Purpose, Power, Switching Fast Switching 600V EmCon Diode

  • IDB09E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 19.3A TO263.