JANTXV1N5807 Pagpepresyo (USD) [5070pcs Stock]
- 1 pcs$8.58515
- 102 pcs$8.54244
- Bilang ng Bahagi:
- JANTXV1N5807
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- DIODE GEN PURP 50V 3A AXIAL. ESD Suppressors / TVS Diodes D MET 6A SFST 50V HRV 6FFTV
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Arrays, Mga module ng Power driver, Mga Transistor - JFET, Thyristors - SCR - Mga Module, Diode - RF and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation JANTXV1N5807 electronic components. JANTXV1N5807 can be shipped within 24 hours after order. If you have any demands for JANTXV1N5807, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JANTXV1N5807 Mga katangian ng produkto
Bilang ng Bahagi :
JANTXV1N5807
Tagagawa :
Microsemi Corporation
Paglalarawan :
DIODE GEN PURP 50V 3A AXIAL
Serye :
Military, MIL-PRF-19500/477
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
50V
Kasalukuyang - Average na Rectified (Io) :
3A
Boltahe - Ipasa (Vf) (Max) @ Kung :
875mV @ 4A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
30ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 50V
Capacitance @ Vr, F :
65pF @ 10V, 1MHz
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
B, Axial
Package ng Tagabigay ng Device :
-
Operating temperatura - Junction :
-65°C ~ 175°C
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
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Vishay Semiconductor Diodes Division
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