Bilang ng Bahagi :
1N6076US
Tagagawa :
Microsemi Corporation
Paglalarawan :
DIODE GEN PURP 50V 6A D5B
Katayuan ng Bahagi :
Active
Boltahe - DC Reverse (Vr) (Max) :
50V
Kasalukuyang - Average na Rectified (Io) :
6A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.76V @ 18.8A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
30ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 50V
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SQ-MELF, E
Package ng Tagabigay ng Device :
D-5B
Operating temperatura - Junction :
-65°C ~ 155°C