Microsemi Corporation - 1N6076US

KEY Part #: K6450180

1N6076US Pagpepresyo (USD) [4772pcs Stock]

  • 1 pcs$9.57848
  • 100 pcs$9.53082

Bilang ng Bahagi:
1N6076US
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 50V 6A D5B. Rectifiers Rectifier
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Mga Module, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single and Transistor - Bipolar (BJT) - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation 1N6076US electronic components. 1N6076US can be shipped within 24 hours after order. If you have any demands for 1N6076US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N6076US Mga katangian ng produkto

Bilang ng Bahagi : 1N6076US
Tagagawa : Microsemi Corporation
Paglalarawan : DIODE GEN PURP 50V 6A D5B
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 50V
Kasalukuyang - Average na Rectified (Io) : 6A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.76V @ 18.8A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 50V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SQ-MELF, E
Package ng Tagabigay ng Device : D-5B
Operating temperatura - Junction : -65°C ~ 155°C

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