SIZ328DT-T1-GE3 Pagpepresyo (USD) [229895pcs Stock]
- 1 pcs$0.16089
- Bilang ng Bahagi:
- SIZ328DT-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET DUAL N-CHAN 25V POWERPAIR.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Mga Transistor - JFET, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIZ328DT-T1-GE3 electronic components. SIZ328DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ328DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ328DT-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIZ328DT-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET DUAL N-CHAN 25V POWERPAIR
Serye :
TrenchFET® Gen IV
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs :
15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.9nC @ 10V, 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
325pF @ 10V, 600pF @ 10V
Kapangyarihan - Max :
2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerWDFN
Package ng Tagabigay ng Device :
8-Power33 (3x3)
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