[12283pcs Stock]
- Bilang ng Bahagi:
- STB25NM60N
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 21A D2PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Diode - Mga Rectifier ng Bridge, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Diode - RF, Diode - Rectifiers - Arrays, Mga Transistor - FET, MOSFET - RF and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STB25NM60N electronic components. STB25NM60N can be shipped within 24 hours after order. If you have any demands for STB25NM60N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB25NM60N Mga katangian ng produkto
Bilang ng Bahagi :
STB25NM60N
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 600V 21A D2PAK
Serye :
MDmesh™ II
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
21A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
160 mOhm @ 10.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
84nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
2400pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
160W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D2PAK
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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