Toshiba Semiconductor and Storage - 2SA1930,ONKQ(J

KEY Part #: K6381927

[9502pcs Stock]


    Bilang ng Bahagi:
    2SA1930,ONKQ(J
    Tagagawa:
    Toshiba Semiconductor and Storage
    Detalyadong Paglalarawan:
    TRANS PNP 2A 180V TO220-3.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Single, Diode - RF, Transistor - Mga FET, MOSFET - Arrays and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
    Kumpetensyang Pakinabang:
    We specialize in Toshiba Semiconductor and Storage 2SA1930,ONKQ(J electronic components. 2SA1930,ONKQ(J can be shipped within 24 hours after order. If you have any demands for 2SA1930,ONKQ(J, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2SA1930,ONKQ(J Mga katangian ng produkto

    Bilang ng Bahagi : 2SA1930,ONKQ(J
    Tagagawa : Toshiba Semiconductor and Storage
    Paglalarawan : TRANS PNP 2A 180V TO220-3
    Serye : -
    Katayuan ng Bahagi : Obsolete
    Uri ng Transistor : PNP
    Kasalukuyang - Kolektor (Ic) (Max) : 2A
    Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 180V
    Vce Saturation (Max) @ Ib, Ic : 1V @ 100mA, 1A
    Kasalukuyang - Collector Cutoff (Max) : 5µA (ICBO)
    DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce : 100 @ 100mA, 5V
    Kapangyarihan - Max : 2W
    Dalas - Paglilipat : 200MHz
    Temperatura ng pagpapatakbo : 150°C (TJ)
    Uri ng Pag-mount : Through Hole
    Pakete / Kaso : TO-220-3 Full Pack
    Package ng Tagabigay ng Device : TO-220NIS

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