Infineon Technologies - FD-DF80R12W1H3_B52

KEY Part #: K6532730

FD-DF80R12W1H3_B52 Pagpepresyo (USD) [2473pcs Stock]

  • 1 pcs$17.50946

Bilang ng Bahagi:
FD-DF80R12W1H3_B52
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
IGBT MODULE VCES 1200V 40A.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Diode - Rectifiers - Single, Mga Transistor - JFET, Transistor - Programmable Unijunction, Thyristors - Mga TRIAC, Mga Transistor - FET, MOSFET - RF, Transistors - IGBTs - Single and Transistor - Bipolar (BJT) - Single ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies FD-DF80R12W1H3_B52 electronic components. FD-DF80R12W1H3_B52 can be shipped within 24 hours after order. If you have any demands for FD-DF80R12W1H3_B52, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FD-DF80R12W1H3_B52 Mga katangian ng produkto

Bilang ng Bahagi : FD-DF80R12W1H3_B52
Tagagawa : Infineon Technologies
Paglalarawan : IGBT MODULE VCES 1200V 40A
Serye : -
Katayuan ng Bahagi : Active
Uri ng IGBT : Trench Field Stop
Pag-configure : Single
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 1200V
Kasalukuyang - Kolektor (Ic) (Max) : 40A
Kapangyarihan - Max : 215W
Vce (on) (Max) @ Vge, Ic : 2.4V @ 15V, 40A
Kasalukuyang - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 235nF @ 25V
Input : Standard
NTC Thermistor : Yes
Temperatura ng pagpapatakbo : -40°C ~ 125°C
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : Module
Package ng Tagabigay ng Device : Module

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