SIDC23D120H8X1SA1 Pagpepresyo (USD) [24354pcs Stock]
- 1 pcs$1.69229
- Bilang ng Bahagi:
- SIDC23D120H8X1SA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- DIODE GEN PURP 1.2KV 35A WAFER.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Mga module ng Power driver, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies SIDC23D120H8X1SA1 electronic components. SIDC23D120H8X1SA1 can be shipped within 24 hours after order. If you have any demands for SIDC23D120H8X1SA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDC23D120H8X1SA1 Mga katangian ng produkto
Bilang ng Bahagi :
SIDC23D120H8X1SA1
Tagagawa :
Infineon Technologies
Paglalarawan :
DIODE GEN PURP 1.2KV 35A WAFER
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
1200V
Kasalukuyang - Average na Rectified (Io) :
35A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.97V @ 35A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
27µA @ 1200V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
Die
Package ng Tagabigay ng Device :
Sawn on foil
Operating temperatura - Junction :
-40°C ~ 175°C
Pinakabagong Balita
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