Bilang ng Bahagi :
FF11MR12W1M1B11BOMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2 N-CH 1200V 100A MODULE
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Silicon Carbide (SiC)
Drain sa Source Voltage (Vdss) :
1200V (1.2kV)
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
100A
Rds On (Max) @ Id, Vgs :
11 mOhm @ 100A, 15V
Vgs (th) (Max) @ Id :
5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds :
7950pF @ 800V
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
Module