Vishay Siliconix - SI7232DN-T1-GE3

KEY Part #: K6525374

SI7232DN-T1-GE3 Pagpepresyo (USD) [239890pcs Stock]

  • 1 pcs$0.15419
  • 3,000 pcs$0.14509

Bilang ng Bahagi:
SI7232DN-T1-GE3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET 2N-CH 20V 25A PPAK 1212-8.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Transistors - IGBTs - Single, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Mga FET, MOSFET - Single and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SI7232DN-T1-GE3 electronic components. SI7232DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7232DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7232DN-T1-GE3 Mga katangian ng produkto

Bilang ng Bahagi : SI7232DN-T1-GE3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET 2N-CH 20V 25A PPAK 1212-8
Serye : TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 25A
Rds On (Max) @ Id, Vgs : 16.4 mOhm @ 10A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds : 1220pF @ 10V
Kapangyarihan - Max : 23W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : PowerPAK® 1212-8 Dual
Package ng Tagabigay ng Device : PowerPAK® 1212-8 Dual

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