Rohm Semiconductor - RFN1LAM6STR

KEY Part #: K6453481

RFN1LAM6STR Pagpepresyo (USD) [1067595pcs Stock]

  • 1 pcs$0.03830
  • 3,000 pcs$0.03811
  • 6,000 pcs$0.03430
  • 15,000 pcs$0.03049
  • 30,000 pcs$0.02858
  • 75,000 pcs$0.02534

Bilang ng Bahagi:
RFN1LAM6STR
Tagagawa:
Rohm Semiconductor
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 800MA PMDTM. Diodes - General Purpose, Power, Switching 700V Vr 0.8A Io Fast Recovery Diode
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Diode - RF, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Transistor - Espesyal na Pakay, Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF and Mga Transistor - JFET ...
Kumpetensyang Pakinabang:
We specialize in Rohm Semiconductor RFN1LAM6STR electronic components. RFN1LAM6STR can be shipped within 24 hours after order. If you have any demands for RFN1LAM6STR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RFN1LAM6STR Mga katangian ng produkto

Bilang ng Bahagi : RFN1LAM6STR
Tagagawa : Rohm Semiconductor
Paglalarawan : DIODE GEN PURP 600V 800MA PMDTM
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 800mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.45V @ 800mA
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Kasalukuyang - Reverse Leakage @ Vr : 1µA @ 600V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SOD-128
Package ng Tagabigay ng Device : PMDTM
Operating temperatura - Junction : 150°C (Max)

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