Toshiba Semiconductor and Storage - TK5Q65W,S1Q

KEY Part #: K6398377

TK5Q65W,S1Q Pagpepresyo (USD) [80621pcs Stock]

  • 1 pcs$0.53099
  • 75 pcs$0.42496
  • 150 pcs$0.37183
  • 525 pcs$0.27278
  • 1,050 pcs$0.21535

Bilang ng Bahagi:
TK5Q65W,S1Q
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
MOSFET N-CH 650V 5.2A IPAK.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
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Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage TK5Q65W,S1Q electronic components. TK5Q65W,S1Q can be shipped within 24 hours after order. If you have any demands for TK5Q65W,S1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK5Q65W,S1Q Mga katangian ng produkto

Bilang ng Bahagi : TK5Q65W,S1Q
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : MOSFET N-CH 650V 5.2A IPAK
Serye : DTMOSIV
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 5.2A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.22 Ohm @ 2.6A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs : 10.5nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 300V
Tampok ng FET : -
Power Dissipation (Max) : 60W (Tc)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : I-PAK
Pakete / Kaso : TO-251-3 Stub Leads, IPak

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