Bilang ng Bahagi :
HS5J V6G
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
DIODE GEN PURP 600V 5A DO214AB
Katayuan ng Bahagi :
Active
Boltahe - DC Reverse (Vr) (Max) :
600V
Kasalukuyang - Average na Rectified (Io) :
5A
Boltahe - Ipasa (Vf) (Max) @ Kung :
-
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
75ns
Kasalukuyang - Reverse Leakage @ Vr :
10µA @ 600V
Capacitance @ Vr, F :
50pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-214AB, SMC
Package ng Tagabigay ng Device :
DO-214AB (SMC)
Operating temperatura - Junction :
-55°C ~ 150°C