Infineon Technologies - FD600R06ME3_B11_S2

KEY Part #: K6532732

FD600R06ME3_B11_S2 Pagpepresyo (USD) [640pcs Stock]

  • 1 pcs$72.54098

Bilang ng Bahagi:
FD600R06ME3_B11_S2
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
IGBT MODULE VCES 600V 600A.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Arrays, Thyristors - Mga TRIAC, Thyristors - DIACs, SIDACs, Transistor - Espesyal na Pakay and Mga module ng Power driver ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies FD600R06ME3_B11_S2 electronic components. FD600R06ME3_B11_S2 can be shipped within 24 hours after order. If you have any demands for FD600R06ME3_B11_S2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FD600R06ME3_B11_S2 Mga katangian ng produkto

Bilang ng Bahagi : FD600R06ME3_B11_S2
Tagagawa : Infineon Technologies
Paglalarawan : IGBT MODULE VCES 600V 600A
Serye : -
Katayuan ng Bahagi : Active
Uri ng IGBT : Trench Field Stop
Pag-configure : Single Chopper
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 600V
Kasalukuyang - Kolektor (Ic) (Max) : 600A
Kapangyarihan - Max : 2250W
Vce (on) (Max) @ Vge, Ic : 1.6V @ 15V, 600A
Kasalukuyang - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 60nF @ 25V
Input : Standard
NTC Thermistor : Yes
Temperatura ng pagpapatakbo : -40°C ~ 125°C
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : Module
Package ng Tagabigay ng Device : Module

Maaari ka ring Makisalamuha sa
  • VS-GB90SA120U

    Vishay Semiconductor Diodes Division

    TRANSISTOR INSLTED GATE BIPOLAR.

  • VS-GB90DA60U

    Vishay Semiconductor Diodes Division

    TRANSISTOR INSLTED GATE BIPOLAR.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • CPV362M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 31 IMS-2.

  • CPV362M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 3.9A IMS-2.

  • CPV363M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6.8A IMS-2.