Vishay Semiconductor Diodes Division - V2F6-M3/I

KEY Part #: K6433566

V2F6-M3/I Pagpepresyo (USD) [991323pcs Stock]

  • 1 pcs$0.03731

Bilang ng Bahagi:
V2F6-M3/I
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
2A60VSMFTRENCH SKY RECT..
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga TRIAC, Diode - RF, Transistor - Espesyal na Pakay, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Single and Mga Transistor - JFET ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division V2F6-M3/I electronic components. V2F6-M3/I can be shipped within 24 hours after order. If you have any demands for V2F6-M3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V2F6-M3/I Mga katangian ng produkto

Bilang ng Bahagi : V2F6-M3/I
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : 2A60VSMFTRENCH SKY RECT.
Serye : eSMP®, TMBS®
Katayuan ng Bahagi : Active
Uri ng Diode : Schottky
Boltahe - DC Reverse (Vr) (Max) : 60V
Kasalukuyang - Average na Rectified (Io) : 2A
Boltahe - Ipasa (Vf) (Max) @ Kung : 600mV @ 2A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 480µA @ 60V
Capacitance @ Vr, F : 250pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-219AB
Package ng Tagabigay ng Device : DO-219AB (SMF)
Operating temperatura - Junction : -40°C ~ 150°C

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