EPC2106ENGRT Pagpepresyo (USD) [119287pcs Stock]
- 1 pcs$0.33054
- 2,500 pcs$0.32890
- Bilang ng Bahagi:
- EPC2106ENGRT
- Tagagawa:
- EPC
- Detalyadong Paglalarawan:
- GAN TRANS 2N-CH 100V BUMPED DIE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Arrays, Diode - Zener - Arrays, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Single, Transistors - IGBTs - Single, Diode - Rectifiers - Arrays and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in EPC EPC2106ENGRT electronic components. EPC2106ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2106ENGRT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2106ENGRT Mga katangian ng produkto
Bilang ng Bahagi :
EPC2106ENGRT
Tagagawa :
EPC
Paglalarawan :
GAN TRANS 2N-CH 100V BUMPED DIE
Serye :
eGaN®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Half Bridge)
Tampok ng FET :
GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.7A
Rds On (Max) @ Id, Vgs :
70 mOhm @ 2A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs :
0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
75pF @ 50V
Kapangyarihan - Max :
-
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
Die
Package ng Tagabigay ng Device :
Die
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