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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  1. Bahay
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  5. FDMS3669S

ON Semiconductor - FDMS3669S

KEY Part #: K6523076

FDMS3669S Pagpepresyo (USD) [293170pcs Stock]

  • 1 pcs$0.12680
  • 3,000 pcs$0.12616
Bilang ng Bahagi:
FDMS3669S
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET 2N-CH 30V 13A/18A PWR56.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga TRIAC, Diode - Rectifiers - Arrays, Mga Transistor - JFET, Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Arrays and Transistor - IGBTs - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor FDMS3669S electronic components. FDMS3669S can be shipped within 24 hours after order. If you have any demands for FDMS3669S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS3669S Mga katangian ng produkto

Bilang ng Bahagi : FDMS3669S
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET 2N-CH 30V 13A/18A PWR56
Serye : PowerTrench®
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual) Asymmetrical
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 13A, 18A
Rds On (Max) @ Id, Vgs : 10 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1605pF @ 15V
Kapangyarihan - Max : 1W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 8-PowerTDFN
Package ng Tagabigay ng Device : Power56

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