Taiwan Semiconductor Corporation - ES1LJ R3G

KEY Part #: K6436292

ES1LJ R3G Pagpepresyo (USD) [1021198pcs Stock]

  • 1 pcs$0.03622

Bilang ng Bahagi:
ES1LJ R3G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 1A DO214AC. Rectifiers 1A, 600V, SUPER FAST SM RECTIFIER
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Rectifiers - Arrays, Transistor - Espesyal na Pakay, Thyristors - SCR - Mga Module, Diode - Mga Rectifier ng Bridge and Diode - Zener - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation ES1LJ R3G electronic components. ES1LJ R3G can be shipped within 24 hours after order. If you have any demands for ES1LJ R3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES1LJ R3G Mga katangian ng produkto

Bilang ng Bahagi : ES1LJ R3G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 600V 1A DO214AC
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.7V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 18pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AC, SMA
Package ng Tagabigay ng Device : DO-214AC (SMA)
Operating temperatura - Junction : -55°C ~ 150°C

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