STGW8M120DF3 Pagpepresyo (USD) [22864pcs Stock]
- 1 pcs$1.80246
- Bilang ng Bahagi:
- STGW8M120DF3
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- TRENCH GATE FIELD-STOP IGBT M SE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - JFET, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - RF, Transistor - Bipolar (BJT) - Single and Transistor - IGBTs - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STGW8M120DF3 electronic components. STGW8M120DF3 can be shipped within 24 hours after order. If you have any demands for STGW8M120DF3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGW8M120DF3 Mga katangian ng produkto
Bilang ng Bahagi :
STGW8M120DF3
Tagagawa :
STMicroelectronics
Paglalarawan :
TRENCH GATE FIELD-STOP IGBT M SE
Serye :
M
Katayuan ng Bahagi :
Active
Uri ng IGBT :
Trench Field Stop
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
16A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
32A
Vce (on) (Max) @ Vge, Ic :
2.3V @ 15V, 8A
Kapangyarihan - Max :
167W
Paglipat ng Enerhiya :
390µJ (on), 370µJ (Off)
Uri ng input :
Standard
Gate Charge :
32nC
Td (on / off) @ 25 ° C :
20ns/126ns
Kondisyon ng Pagsubok :
600V, 8A, 33 Ohm, 15V
Reverse Recovery Time (trr) :
103ns
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-247-3
Package ng Tagabigay ng Device :
TO-247-3
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