Nexperia USA Inc. - BUK9Y6R0-60E,115

KEY Part #: K6416527

BUK9Y6R0-60E,115 Pagpepresyo (USD) [164957pcs Stock]

  • 1 pcs$0.22422
  • 1,500 pcs$0.20445

Bilang ng Bahagi:
BUK9Y6R0-60E,115
Tagagawa:
Nexperia USA Inc.
Detalyadong Paglalarawan:
MOSFET N-CH 60V 100A LFPAK.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Thyristors - SCR - Mga Module, Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF, Transistor - Programmable Unijunction and Thyristors - Mga TRIAC ...
Kumpetensyang Pakinabang:
We specialize in Nexperia USA Inc. BUK9Y6R0-60E,115 electronic components. BUK9Y6R0-60E,115 can be shipped within 24 hours after order. If you have any demands for BUK9Y6R0-60E,115, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BUK9Y6R0-60E,115 Mga katangian ng produkto

Bilang ng Bahagi : BUK9Y6R0-60E,115
Tagagawa : Nexperia USA Inc.
Paglalarawan : MOSFET N-CH 60V 100A LFPAK
Serye : Automotive, AEC-Q101, TrenchMOS™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 100A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 5.2 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 39.4nC @ 5V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 6319pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 195W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : LFPAK56, Power-SO8
Pakete / Kaso : SC-100, SOT-669

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