[13015pcs Stock]
- Bilang ng Bahagi:
- IRF3711L
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 20V 110A TO-262.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Thyristors - DIACs, SIDACs, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Mga Module, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF3711L electronic components. IRF3711L can be shipped within 24 hours after order. If you have any demands for IRF3711L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF3711L Mga katangian ng produkto
Bilang ng Bahagi :
IRF3711L
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 20V 110A TO-262
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
110A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2980pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
3.1W (Ta), 120W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-262
Pakete / Kaso :
TO-262-3 Long Leads, I²Pak, TO-262AA
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