HGT1S12N60A4DS Pagpepresyo (USD) [28587pcs Stock]
- 1 pcs$1.44885
- 800 pcs$1.44164
- Bilang ng Bahagi:
- HGT1S12N60A4DS
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- IGBT 600V 54A 167W D2PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Diode - Rectifiers - Arrays, Diode - Zener - Single, Diode - Rectifiers - Single, Transistor - Espesyal na Pakay, Diode - RF, Transistors - IGBTs - Single and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor HGT1S12N60A4DS electronic components. HGT1S12N60A4DS can be shipped within 24 hours after order. If you have any demands for HGT1S12N60A4DS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGT1S12N60A4DS Mga katangian ng produkto
Bilang ng Bahagi :
HGT1S12N60A4DS
Tagagawa :
ON Semiconductor
Paglalarawan :
IGBT 600V 54A 167W D2PAK
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng IGBT :
-
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
600V
Kasalukuyang - Kolektor (Ic) (Max) :
54A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
96A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 12A
Kapangyarihan - Max :
167W
Paglipat ng Enerhiya :
55µJ (on), 50µJ (off)
Uri ng input :
Standard
Gate Charge :
78nC
Td (on / off) @ 25 ° C :
17ns/96ns
Kondisyon ng Pagsubok :
390V, 12A, 10 Ohm, 15V
Reverse Recovery Time (trr) :
30ns
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device :
TO-263AB
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