SISS26DN-T1-GE3 Pagpepresyo (USD) [117334pcs Stock]
- 1 pcs$0.31523
- Bilang ng Bahagi:
- SISS26DN-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CHANNEL 60V 60A 1212-8S.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays, Diode - Mga Rectifier ng Bridge, Thyristors - DIACs, SIDACs, Thyristors - SCR - Mga Module, Transistors - IGBTs - Single and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SISS26DN-T1-GE3 electronic components. SISS26DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS26DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS26DN-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SISS26DN-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CHANNEL 60V 60A 1212-8S
Serye :
TrenchFET® Gen IV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
60A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1710pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
57W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PowerPAK® 1212-8S (3.3x3.3)
Pakete / Kaso :
PowerPAK® 1212-8S
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