DMN601DWKQ-7 Pagpepresyo (USD) [1146094pcs Stock]
- 1 pcs$0.03227
- Bilang ng Bahagi:
- DMN601DWKQ-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CHAN 41V 60V SOT363.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Thyristors - Mga SCR, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Mga Rectifier ng Bridge, Transistor - IGBTs - Arrays and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN601DWKQ-7 electronic components. DMN601DWKQ-7 can be shipped within 24 hours after order. If you have any demands for DMN601DWKQ-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN601DWKQ-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMN601DWKQ-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CHAN 41V 60V SOT363
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
305mA (Ta)
Rds On (Max) @ Id, Vgs :
2 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
0.304nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Kapangyarihan - Max :
200mW
Temperatura ng pagpapatakbo :
-65°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-TSSOP, SC-88, SOT-363
Package ng Tagabigay ng Device :
SOT-363
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