Vishay Siliconix - SIHD180N60E-GE3

KEY Part #: K6417339

SIHD180N60E-GE3 Pagpepresyo (USD) [29408pcs Stock]

  • 1 pcs$1.40143

Bilang ng Bahagi:
SIHD180N60E-GE3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET E SERIES 600V DPAK TO-25.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Thyristors - SCR - Mga Module, Transistor - Programmable Unijunction, Transistor - Espesyal na Pakay, Transistor - IGBTs - Arrays, Diode - Zener - Single, Transistors - IGBTs - Single and Transistor - Bipolar (BJT) - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SIHD180N60E-GE3 electronic components. SIHD180N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHD180N60E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHD180N60E-GE3 Mga katangian ng produkto

Bilang ng Bahagi : SIHD180N60E-GE3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET E SERIES 600V DPAK TO-25
Serye : E
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 19A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 195 mOhm @ 9.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 32nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1080pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 156W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : TO-252AA
Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63

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