[8866pcs Stock]
- Bilang ng Bahagi:
- PHU11NQ10T,127
- Tagagawa:
- NXP USA Inc.
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 10.9A SOT533.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Zener - Single, Transistor - Programmable Unijunction, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - RF and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in NXP USA Inc. PHU11NQ10T,127 electronic components. PHU11NQ10T,127 can be shipped within 24 hours after order. If you have any demands for PHU11NQ10T,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHU11NQ10T,127 Mga katangian ng produkto
Bilang ng Bahagi :
PHU11NQ10T,127
Tagagawa :
NXP USA Inc.
Paglalarawan :
MOSFET N-CH 100V 10.9A SOT533
Serye :
TrenchMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10.9A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
180 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
14.7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
360pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
57.7W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I-PAK
Pakete / Kaso :
TO-251-3 Short Leads, IPak, TO-251AA
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