GeneSiC Semiconductor - 1N3767R

KEY Part #: K6425358

1N3767R Pagpepresyo (USD) [11842pcs Stock]

  • 1 pcs$3.48004
  • 100 pcs$3.37202

Bilang ng Bahagi:
1N3767R
Tagagawa:
GeneSiC Semiconductor
Detalyadong Paglalarawan:
DIODE GEN PURP REV 900V 35A DO5. Rectifiers 900V 35A REV Leads Std. Recovery
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Single, Diode - RF, Diode - Zener - Arrays, Transistor - IGBTs - Arrays and Diode - Rectifiers - Single ...
Kumpetensyang Pakinabang:
We specialize in GeneSiC Semiconductor 1N3767R electronic components. 1N3767R can be shipped within 24 hours after order. If you have any demands for 1N3767R, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N3767R Mga katangian ng produkto

Bilang ng Bahagi : 1N3767R
Tagagawa : GeneSiC Semiconductor
Paglalarawan : DIODE GEN PURP REV 900V 35A DO5
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard, Reverse Polarity
Boltahe - DC Reverse (Vr) (Max) : 900V
Kasalukuyang - Average na Rectified (Io) : 35A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.2V @ 35A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 50V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Chassis, Stud Mount
Pakete / Kaso : DO-203AB, DO-5, Stud
Package ng Tagabigay ng Device : DO-5
Operating temperatura - Junction : -65°C ~ 190°C
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