Taiwan Semiconductor Corporation - ES3FB R5G

KEY Part #: K6442928

ES3FB R5G Pagpepresyo (USD) [445042pcs Stock]

  • 1 pcs$0.08311

Bilang ng Bahagi:
ES3FB R5G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 300V 3A DO214AA. Rectifiers 3A, 300V, SUPER FAST SMT RECTIFIER
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Diode - RF, Thyristors - DIACs, SIDACs, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Single and Transistor - Bipolar (BJT) - Single ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation ES3FB R5G electronic components. ES3FB R5G can be shipped within 24 hours after order. If you have any demands for ES3FB R5G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3FB R5G Mga katangian ng produkto

Bilang ng Bahagi : ES3FB R5G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 300V 3A DO214AA
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 300V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.13V @ 3A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 300V
Capacitance @ Vr, F : 41pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AA, SMB
Package ng Tagabigay ng Device : DO-214AA (SMB)
Operating temperatura - Junction : -55°C ~ 150°C

Maaari ka ring Makisalamuha sa
  • VS-8EWS12STRLPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1.2KV 8A D-PAK.

  • VS-8EWS08STRRPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 8A D-PAK.

  • VS-8EWS08STRPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 8A D-PAK.

  • VS-8EWS08STRLPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 8A D-PAK.

  • VS-8EWF12STRPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1.2KV 8A D-PAK.

  • VS-8EWF06STRPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 8A D-PAK.