Taiwan Semiconductor Corporation - ES3AHM6G

KEY Part #: K6439812

ES3AHM6G Pagpepresyo (USD) [761822pcs Stock]

  • 1 pcs$0.04855

Bilang ng Bahagi:
ES3AHM6G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 50V 3A DO214AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Mga Transistor - FET, MOSFET - RF, Diode - RF, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Mga module ng Power driver ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation ES3AHM6G electronic components. ES3AHM6G can be shipped within 24 hours after order. If you have any demands for ES3AHM6G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3AHM6G Mga katangian ng produkto

Bilang ng Bahagi : ES3AHM6G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 50V 3A DO214AB
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 50V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 950mV @ 3A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 50V
Capacitance @ Vr, F : 45pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AB, SMC
Package ng Tagabigay ng Device : DO-214AB (SMC)
Operating temperatura - Junction : -55°C ~ 150°C

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